Equations
R=AρL- R = Resistance
- ρ = Resistivity (Ωcm)
- L = Length
- A = CS Area
J=σE- J = Current Density
- σ = Conductivity (Ωcm1)
- E = Electric Field
Vbi=qkTln(ni2NDNA)- Vbi = Built-in Potential
Doping
J=nev
- n = Charge Density
- e = Charge
- v = Drift Velocity
v=μE- v = Drift Velocity
- μ = Mobility
- E = Electric Field
σ=neμρ=σ1σ=q(μnn+μpp)- q = Electronic Charge
- μ = Carrier Mobility (Vscm2)
1eV=1.602×10−19J